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| HMC608LC4 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz 5 LINEAR & POWER AMPLIFIERS - SMT Typical Applications The HMC608LC4 is ideal for: * Point-to-Point Radios * Point-to-Multi-Point Radios * Military End-Use Features Output IP3: +33 dBm Saturated Power: +27.5 dBm @ 23% PAE Gain: 29.5 dB Supply: +5.0V @ 310 mA 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm SMT Package Functional Diagram General Description The HMC608LC4 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless "Pb free" SMT package. The amplifier has two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left open). The electrical specifications in the table below are shown for the amplifier operating in high gain mode. Operating from 9.5 to 11.5 GHz, the amplifier provides 29.5 dB of gain, +27.5 dBm of saturated power and 23% PAE from a +5.0 V supply voltage. Noise figure is 6 dB while output IP3 is +33 dBm. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC608LC4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifications, TA = +25 C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1], Vpd = GND [2] Parameter Frequency Range Gain [3] Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3] [[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical. [2] Vpd= ground for high gain mode, Vpd = open for low gain mode. [3] In low gain mode, typical gain is 22 dB and typical current is 67 mA. 23 27 Min. Typ. 9.5 - 11.5 29.5 0.02 13 19 27 27.5 33 6.0 310 350 0.03 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA 5 - 310 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608LC4 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Broadband Gain & Return Loss 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 7 8 9 10 Gain vs. Temperature 34 33 32 5 LINEAR & POWER AMPLIFIERS - SMT 5 - 311 RESPONSE (dB) GAIN (dB) S21 S11 S22 31 30 29 28 27 26 25 24 +25C +85C -40C 11 12 13 14 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25C +85C -40C -4 RETURN LOSS (dB) -8 -12 +25C +85C -40C -16 -20 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) P1dB vs. Temperature 35 30 25 P1dB (dBm) 20 15 10 5 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) Psat vs. Temperature 35 30 25 Psat (dBm) 20 15 10 5 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608LC4 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz 5 LINEAR & POWER AMPLIFIERS - SMT Output IP3 vs. Temperature 40 35 Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 30 OIP3 (dBm) 25 20 15 10 5 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C 7 6 5 4 3 2 1 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C Gain, Power & OIP3 vs. Supply Voltage @ 10.3 GHz GAIN (dB), P1dB(dBm), Psat (dBm), OIP3(dBm) 35 34 33 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 32 31 30 29 28 27 26 25 4.5 5 Vdd Supply Voltage (Vdc) 5.5 Gain P1dB Psat OIP3 +25C +85C -40C 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) Power Compression @ 10.3 GHz 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -20 Pout Gain PAE Power Dissipation 4 3.5 3 2.5 2 1.5 1 -30 9 GHz 9.5 GHz 10 GHz 10.5 GHz 11.0 GHz 11.5 GHz -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 POWER DISSIPATION (W) -25 -20 -15 -10 -5 0 Pin (dBm) INPUT POWER (dBm) 5 - 312 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608LC4 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Low Gain Mode, Broadband Gain & Return Loss 25 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 -35 7 8 9 10 11 12 13 14 FREQUENCY (GHz) S21 S11 S22 Low Gain Mode, Gain vs. Temperature 30 28 26 24 GAIN (dB) 22 20 18 16 14 12 10 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C 5 LINEAR & POWER AMPLIFIERS - SMT 5 - 313 Low Gain Mode, Input Return Loss vs. Temperature 0 -4 RETURN LOSS (dB) Low Gain Mode, Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25C +85C -40C -8 -12 -16 -20 -24 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608LC4 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 300 310 325 5 LINEAR & POWER AMPLIFIERS - SMT Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 22.18 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature 7 Vdc -4.0 to -1.0 Vdc +10 dBm 175 C 2W 45 C/W -65 to +150 C -40 to +85 C Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 310 mA at +5.0V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM - C - 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 5 - 314 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608LC4 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Pin Descriptions Pin Number Function Description Interface Schematic 5 Gate control for amplifier. Adjust to achieve Id of 310 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF, 1000 pF and 2.2 F are required. 1 Vgg 2, 3, 7 - 12, 16 - 18, 22, 24 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. 4, 6, 13, 15 GND 5 RFIN This pin is AC coupled and matched to 50 Ohms. 14 RFOUT This pin is AC coupled and matched to 50 Ohms. 21, 20, 19 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 F are required. 23 Vpd High gain (connect to ground) / low gain mode pin control (open circuit). External bypass capacitors of 100 pF, 1000 pF and 2.2 F are required. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 315 LINEAR & POWER AMPLIFIERS - SMT HMC608LC4 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz 5 LINEAR & POWER AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 112763 [1] Item J1, J2 J3 - J8 C1 - C6 C6 - C10 C11 - C15 U1 PCB [2] Description PC mount SMA connector DC Pin 100 pF capacitor, 0402 pkg. 1,000 pF Capacitor, 0603 pkg. 2.2F Capacitor, Tantalum HMC608LC4 Amplifier 112761 Evaluation PCB [1] Reference this number when ordering complete evlaution PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. 5 - 316 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608LC4 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Notes: 5 LINEAR & POWER AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 317 |
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